| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent degradation of a transistor characteristic though a subsequent thermal process is performed without removing a hard mask layer by previously removing hydrogen and moisture in a target etching layer through a vacuum annealing process. A semiconductor substrate(100) is divided into a cell region(C) and a peripheral region(P). The semiconductor substrate has a lower structure such as a gate(110) and a bit line(160). A third dielectric(170) is formed on a second dielectric(150) to cover the bit line. An annealing process is performed on the resultant substrate structure in a vacuum condition so that hydrogen and moisture in the second dielectric and the third dielectric are removed. A hard mask layer is formed on the third dielectric. A photoresist layer pattern defining a storage node contact plug forming region is formed on the hard mask layer. The hard mask layer is etched by using the photoresist layer pattern as an etching mask to form a hard mask pattern(180a). The remaining photoresist layer pattern is removed. The third dielectric and the second dielectric are etched by using the hard mask pattern as an etching mask to form a contact hole(H) exposing a landing plug(140) formed on a source region(120a).
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