| 摘要 |
According to the present invention, there is provided a semiconductor device fabrication method that coats a semiconductor substrate with a silazane perhydride polymer solution prepared by dispersing a silazane perhydride polymer in a solvent containing carbon, thereby forming a coating film. A polysilazane film is formed by volatilizing the solvent by heat-treating the coating film. The semiconductor substrate is inserted into a predetermined furnace, where the pressure in the furnace is lowered. The polysilazane film is oxidized while the pressure in the furnace is raised by supplying steam into the furnace, thereby forming a silicon oxide film.
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