| 摘要 |
A phase change RAM device is provided to enhance process efficiency by arranging a supply voltage line between bit lines by to improve device characteristics by applying a supply voltage to each of unit cells. An isolation layer(2) is formed on a semiconductor substrate(1) to define active regions(3). A pair of gates(4) are disposed on each of the active regions on a front surface of the semiconductor substrate. Source/drain regions(5,6) are formed within the semiconductor substrate of both sides of the gates. A plurality of first contact plugs(7) of a bar type are formed on the source/drain regions. A plurality of second contact plugs come in contact with the source regions. A metal pad is formed on the first contact plugs of the drain region. A lower electrode of a plug type is formed on the metal pad. A phase change layer and an upper electrode(11) are formed on the lower electrode. A third contact plug is formed on the upper electrode. A plurality of bit lines(14) come in contact with the third contact plugs. A fourth contact plug(13) is formed on the second contact plug. A supply voltage line(15) is arranged between the bit lines and come in contact with the fourth contact plugs.
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