Junction field effect transistors - using tantlum oxide dielectric and needing fewer masks

摘要

Mfe of junction field effect transistors comprising one stage in which a dielectric layer is formed by the thermal oxidation of a metal (e.g. Ta, Zr, Hf, pref. Ta). Some regions of the metal are protected from oxidation by a second, non-oxidisable metal, e.g. Al, and these areas are used to form electrical contacts to source, drain (and sometimes gate). The number of masks required is reduced from four to one or two.