发明名称 Memory device and method of controlling the same
摘要 In a single data rate (SDR) mode, logic level transitions of a data condition prior-determination signal RDYO are outputted to an output terminal (O) in response to an internal clock signal CKI. A ready signal RDY is outputted in synchronization with the internal clock signal CKI following a logic level transition of the data condition prior-determination signal RDYO. In a double data rate (DDR) mode, on the other hand, a toggle signal is outputted to the output terminal (O) in correspondence with the internal clock signal CKI following a logical level transition of the data condition prior-determination signal RDYO. After the internal clock signal CKI following the logical level transition of the data condition prior-determination signal RDYO, a strobe signal DQS is outputted in synchronization with the internal clock signal CKI. The ready signal RDY is outputted at the data condition informing terminal (X) in SDR mode while, on the other hand, the strobe signal DQS is outputted at the data condition informing terminal (X) in DDR mode.
申请公布号 US7239576(B2) 申请公布日期 2007.07.03
申请号 US20060342013 申请日期 2006.01.27
申请人 SPANSION LLC 发明人 SHIMBAYASHI KOJI
分类号 G11C8/18 主分类号 G11C8/18
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