| 摘要 |
A method for manufacturing a transistor is provided to prevent the deformation of a metal silicide layer and to prevent the generation of bridge between metal silicide layers by forming a spacer at both sidewalls of a gate conductive pattern after a metal silicide forming process. A gate conductive pattern(220) is formed on a semiconductor substrate(200) via a gate insulating pattern(210). A first metal silicide layer(231) and a second metal silicide layer(232) are formed on the gate conductive pattern and the substrate, respectively. A spacer layer(250) is formed at both sidewalls of the gate insulating pattern and the gate conductive pattern. Source/drain regions(240) are formed in the substrate under the second metal silicide layer by an ion implantation process.
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