METHOD FOR FORMING DAMASCENE LINE OF SEMICONDUCTOR DEVICE

摘要

A method for forming a damascene line of a semiconductor device is provided to enhance reliability of the semiconductor device by suppressing the generation of voids in the damascene line. A damascene region for defining a via hole(212b) and a trench(212c) is formed on a semiconductor substrate(202) by removing selectively a part of an interlayer dielectric(206). A diffusion barrier(210) is formed within the damascene region. The inside of the damascene is buried with a metal seed material by performing a deposition under a first process condition. The damascene region is gap-filled with a metal material by performing a deposition process under a second process condition. An etch process is performed to remove the metal material, the metal seed material, and the diffusion barrier in order to form a damascene line(212).