| 摘要 |
A method for measuring a leakage between well junctions of a semiconductor device is provided to prevent waste of time and manpower for a leakage measurement by comparing contrast of a metal line connected to a probing pad to determine a leakage flow. An active region(22) is formed on a predetermined region of a semiconductor substrate. The active region that is not trench-etched is defined by a trench-etched field region(21). A contact(23) is formed in the active region to connect to a wire. A metal line is connected to the active region through the contact. A well is formed on the active region. Probing pads(A,B) are connected to the metal line for measuring a junction leakage between the neighboring wells. A charge(25) is scanned in an SEM(Scanning Electron Microscope) chamber.
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