| 摘要 |
A phase change memory device is provided to increase the number of contacts of a source terminal more than that of a drain terminal by forming an active region in a diamond shape. An isolation film is formed on a semiconductor substrate(20) to define a diamond-shaped active region(22). Two gates(23) are disposed in the active region comprising the isolation film. A source region(24) is formed in the active region between the gates, and a drain region(25) is formed in the active region outside each gate. Plural first contact plugs are arranged in row on the source region, and plural second contact plugs are arranged in row on the drain region. A first bar-type metal pad(28) is in contact with the first contact plugs, and second bar-type metal pad(29) is in contact with the second contact plug. A phase change cell(31) is formed on the second contact plug, and has a lower electrode and an upper electrode(31). A third contact plug is formed on the phase change upper electrode, and a metal wiring(32) is in contact with the third contact plug.
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