| 摘要 |
An isolation region of a semiconductor device and a method for forming the same are provided to prevent moat caused by over-etching of an edge portion by forming the isolation region using a selective etch process. A sacrificial oxide layer and a sacrificial nitride layer are stacked on a semiconductor substrate(100) having an edge region(E) and a center region(C). A first trench(T1) and a second trench(T2) are formed in the edge region and the center region, respectively by etching the sacrificial nitride layer, the sacrificial oxide layer and the substrate using a selective etch process. An oxide layer is filled in the first and the second trenches. By polishing the oxide layer to expose the sacrificial layer of the edge region, a first isolation region(108) is formed in the first trench and a second isolation pattern is formed. A second isolation region(110) is formed by etching the second isolation pattern using a photoresist pattern. At this time, the second isolation region is thicker than the first isolation region.
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