| 摘要 |
An IC resistor and its manufacturing method are provided to reduce remarkably the size of the IC resistor itself by using a polysilicon layer of a stacked structure. An IC resistor(10) is composed of a first polysilicon stacked layer and a second polysilicon stacked layer connected with each other in series. Each polysilicon stacked layer is composed of an oxide layer on a semiconductor substrate, a lower polysilicon layer on the oxide layer, a dielectric film on the lower polysilicon layer, and an upper polysilicon layer on the dielectric film. The length of the upper polysilicon layer is smaller than that of the lower polysilicon layer. The first polysilicon stacked layer includes a first connection portion connected with a first terminal and a second connection portion connected with the second polysilicon stacked layer. The second polysilicon stacked layer includes a third connection portion connected with the first polysilicon stacked layer and a fourth connection portion connected with a second terminal. The first and second terminals are used as terminals of the IC resistor.
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