发明名称 |
Method for processing a semiconductor device comprising a silicon-oxy-nitride dielectric layer |
摘要 |
The present invention provides a method for processing a semiconductor device wherein a dielectric layer is partially converted into a silicon-oxy-nitride by incorporation of nitrogen atoms into the dielectric layer, which comprises a silicon oxide. Before the introduction of the nitrogen atoms into the dielectric layer, the dielectric layer is provided as a silicon oxide in which the atomic silicon to oxygen ration is greater than ½. In this way, MOS transistors are obtained with a high quality interface between the dielectric region and semiconductor substrate, and a dielectric region which is impermeable to impurity atoms from the gate region and which has a thickness which is substantially equal to the dielectric layer as deposited.
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申请公布号 |
US7238625(B2) |
申请公布日期 |
2007.07.03 |
申请号 |
US20040966153 |
申请日期 |
2004.10.15 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
VENEZIA VINCENT CHARLES;CUBAYNES FLORENCE NATHALIE |
分类号 |
H01L21/31;H01L21/318;H01L21/265;H01L21/28;H01L21/469;H01L29/51;H01L29/78 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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