发明名称 |
Method for removing oxides from a Ge semiconductor substrate surface |
摘要 |
This invention relates to a method for removing oxides from the surface of a Ge semiconductor substrate comprising the step of subjecting the surface to a Ge oxide etching solution characterized in that the Ge oxide etching solution removes Ge oxides and Ge sub-oxides from the surface.
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申请公布号 |
US7238291(B2) |
申请公布日期 |
2007.07.03 |
申请号 |
US20040943494 |
申请日期 |
2004.09.17 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) |
发明人 |
ONSIA BART;TEERLINCK IVO |
分类号 |
H01L21/306;H01L21/311 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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