| 摘要 |
A method for forming a storage node of a semiconductor device is provided to remove rapidly a mold insulating layer in a dip-out process by etching selectively a WN layer before the dip-out process. A semiconductor substrate(200) including a storage node plug(220) is provided. A mold insulating layer(240) is formed on the entire surface of the semiconductor substrate including the storage node plug. A hole(H) for exposing the storage node plug is formed by etching the mold insulating layer. A WN layer for barrier and a W layer for storage node are formed on a surface of the hole and the mold insulating layer. The W layer and the WN layer are removed from the mold insulating layer. A top end of a sidewall of the mold insulating layer is exposed by etching selectively the WN layer between the mold insulating layer and the W layer. The mold insulating layer is removed by a wet-etch process.
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