| 摘要 |
A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit ( 3 ) on a substrate ( 1 ) in a deposition apparatus, taking out the substrate ( 1 ) having the photoelectric conversion unit ( 3 ) from the deposition apparatus to the air, introducing the substrate ( 1 ) into a deposition apparatus and carrying out plasma exposure processing on the substrate ( 1 ) in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer ( 33 ) and hydrogen, forming a conductivity type intermediate layer ( 5 ) by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit ( 4 ).
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