INSULATION LAYER, ORGANIC THIN FILM TRANSISTOR USING THE SAME AND MANUFACTURING METHOD

摘要

An insulation layer, an organic thin film transistor having the same and a forming method thereof are provided to make a thin film at a low temperature by adding inorganic material into vinyl polymer. A gate electrode(110) is formed in one region on a substrate(100), and a gate insulation layer(120) is formed on the gate electrode and the substrate. An organic semiconductor layer(130) is located at a position corresponding to the organic semiconductor layer on the region of the gate insulation layer. At least a part of source/drain electrodes(140,140') is formed on the organic semiconductor layer. The gate insulation layer contains vinyl polymer and inorganic material.