Dual metal gate transistors for ???? process,申请号KR20027016950-传众专利搜索

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发明名称	Dual metal gate transistors for ???? process
摘要
申请公布号	KR100733736(B1)	申请公布日期	2007.07.02
申请号	KR20027016950	申请日期	2001.05.10
申请人		发明人
分类号	H01L21/28;H01L27/092;H01L21/336;H01L21/8234;H01L21/8238;H01L27/088;H01L29/423;H01L29/49	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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