| 摘要 |
A method for controlling growth-type defect generating ions of a photomask is provided to prevent the activation of SO4 ions by coating a shielding layer on a mask substrate using a plasma deposition. A mask pattern(12) is formed on a substrate(10) of a photomask. The photomask contains growth-type defect generating ions. A shielding layer(14) is formed on the entire surface of the mask substrate by using a plasma deposition, so that the reaction of the growth-type defect generating ions on an outer material is restrained by preventing the activation of the growth-type defect generating ions. SO4 ions are used as the growth-type defect generating ions.
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