PLASMA PROCESSING EQUIPMENT AND PROCESS FOR PERFORMING SHALLOW TRENCH ISOLATION USING THE SAME

摘要

Plasma processing equipment and a method for forming an isolation film using the same are provided to perform inductively coupled plasma and chemical dry etch in one process chamber. An electrostatic chuck(120) is located in a process chamber(110), and is connected to a bias power(125). An induced coil antenna(130) is positioned on an external upper portion of the process chamber, and is connected to a high-frequency power(135). A process gas supply unit(150) is connected to the process chamber, and supplies a process gas into the process chamber to form a trench on a substrate. A nozzle part(200) supplies plasma into the process chamber to round a lower corner of the trench.