| 摘要 |
A method for fabricating a semiconductor device is provided to sufficiently secure a trench fixing margin by forming two lateral oxide layers and then forming a trench. An insulation layer(13) is formed on a semiconductor substrate(11) with an active region and an isolation region. The insulation layer of the isolation region is etched, and a first lateral insulation layer is formed on a side of the insulation layer. The insulation layer is etched in a predetermined thickness. A second lateral insulation layer is formed on the insulation layer and a side of the first lateral insulation. The substrate is etched by using the second lateral insulation layer as a mask to form a trench(17), and an isolation insulation layer is formed in the trench.
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