| 摘要 |
A method for forming an isolation film in a semiconductor device is provided to correct a step height of an effective field oxide layer in a peripheral circuit area and a cell area by performing an oxidization process on the isolation film. A tunnel oxide layer(102), a first polycrystalline silicon layer(104), and a nitride layer are formed on a substrate(100), and then are partially etched to form a trench. A well oxide layer(108) is formed on a surface of the trench, a cap fill process is performed on the substrate to form a first insulation layer(110). A pad nitride layer and a capping oxide layer are formed on the entire surface of the substrate, and then are removed from a periphery circuit region to expose the first insulation layer. An oxidization process is performed on the substrate to form a second insulation layer on the first insulation layer.
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