| 摘要 |
A method for correcting a CD(Critical Dimension) of a phase shift mask is provided to enhance the uniformity of CD of the phase shift mask by correcting the CD of a light shielding pattern for defining a phase shift pattern before patterning a phase shift layer. A phase shift layer(110), a light shielding layer(120) and a resist pattern are sequentially formed on a transparent substrate(100). A light shielding pattern is formed on the resultant structure by etching selectively the light shielding layer using the resist pattern as an etch mask. The resist pattern is then removed therefrom. The CD of the light shielding pattern is measured. The CD of the light shielding pattern is selectively corrected. A phase shift pattern is formed on the resultant structure by patterning selectively the phase shift layer using the corrected phase shift pattern as an etch mask. Then, the light shielding pattern is removed therefrom.
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