METHOD FOR MANUFACTURING FIN TRANSISTOR

摘要

A method for fabricating a fin transistor is provided to prevent the decrease of threshold voltage due to electric field concentration of a fin top region by performing a beam-line ion implantation process on a fin active region. An isolation film(64) of a semiconductor substrate(61) is selectively etched to form a block-shaped fin active region(65). After performing a beam-line ion implantation process, a plasma ion implantation is performed on the substrate to form a channel region(67) in the pin active region. A gate insulation layer is formed on a sidewall and upper portion of the fin active region. A gate electrode is formed to surround all surfaces of the fin active region.