| 摘要 |
<p>A method for manufacturing a semiconductor device, a semiconductor device and an electronic apparatus therefor are provided to manufacture a MOSFET having a gate all around structure with a relatively simple method. A lower gate electrode is formed on a substrate(12), and a sacrificial layer is formed on the substrate to cover the lower gate electrode. A semiconductor layer(18) is formed on the sacrificial layer to cross the semiconductor layer, and then the sacrificial layer is removed. A lower gate insulating layer(22a) is formed in an empty space between the lower gate electrode and the semiconductor film. An upper gate insulating layer(22b) is formed on the semiconductor layer. An upper gate electrode(14b) is formed on the upper gate insulating layer.</p> |
