| 摘要 |
A method for correcting a phase shift mask is provided to reduce a manufacturing time and to economize fabrication costs by omitting an additional correcting process and an additional correcting mask using an NH4OH solution treatment. A phase shift layer and a mask layer are sequentially formed on a quartz substrate(100). A mask pattern and a phase shift pattern(115) are formed by removing selectively the mask layer and the phase shift layer. A cleaning process is performed on the resultant structure by using a predetermined cleaning solution. At this time, the CD of the phase shift pattern is corrected by the predetermined cleaning solution. The phase shift layer is made of MoSiN. An NH4OH solution is used as the predetermined cleaning solution.
|
