| 摘要 |
An annealed wafer and its manufacturing method are provided to sufficiently increase oxygen precipitation after annealing, and uniform radial distribution of oxygen precipitate density. An annealed wafer has a surface defect-free layer, in which excellent gettering ability is provided on the entire wafer surface. A minimum value of an oxygen precipitate density in the annealed wafer plane is 5*10^8 number/cm^3 or more, and an oxygen precipitate density radial distribution variation is 0.5 or less. A silicon single crystal substrate having not a V region and an I region as defective regions is annealed.
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