| 摘要 |
<p>A method for fabricating a MOS field effect transistor of a semiconductor device is provided to prevent deterioration of a pMOS transistor characteristic by dividing an etching gas into fluorine and chlorine. An interlayer dielectric(404) is deposited on a semiconductor substrate(400) having a metal interconnection(402). A protection layer(406) is deposited on the interlayer dielectric. The protection layer and the interlayer dielectric are primarily etched by using a photoresist mask for defining areas to be etched in a fuse area and a pad area using an etching gas including a first component, thereby exposing the metal interconnection. The primary etching is stopped, and a surface of the metal interconnection is secondarily etched using an etching gas including a second component.</p> |
