PASTED SOI SUBSTRATE, PROCESS FOR PRODUCING THE SAME AND SEMICONDUCTOR DEVICE,申请号KR20047011567-传众专利搜索

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发明名称	PASTED SOI SUBSTRATE, PROCESS FOR PRODUCING THE SAME AND SEMICONDUCTOR DEVICE
摘要
申请公布号	KR100734229(B1)	申请公布日期	2007.07.02
申请号	KR20047011567	申请日期	2004.07.27
申请人		发明人
分类号	H01L27/12;H01L21/02;H01L21/336;H01L21/762;H01L21/764;H01L29/786	主分类号	H01L27/12
代理机构		代理人
主权项
地址

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