| 摘要 |
A method for forming a carbon nano tube and a method for forming a metal line of a semiconductor device using the same are provided to reduce electric resistance, to increase density of current and to improve the degree of integration by improving growth density of the carbon nano tube. A substrate(110) is prepared, wherein the substrate includes a plurality of protruded portions(120a). A catalytic layer(122) is formed on the resultant structure in order to cover the protruded portions. The catalytic layer is capable of promoting the growth of a carbon nano tube on the substrate. The carbon nano tube(140) is grown on the catalytic layer by injecting a predetermined gas containing carbon into the catalytic layer.
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