Novel Flash Memory and its Manufacturing to Minimize the Cross-Talk Effect by Shielding Floating Gate Using Screen-Layer or Ground-Layer,申请号KR20050002292-传众专利搜索

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发明名称	Novel Flash Memory and its Manufacturing to Minimize the Cross-Talk Effect by Shielding Floating Gate Using Screen-Layer or Ground-Layer
摘要
申请公布号	KR100734235(B1)	申请公布日期	2007.07.02
申请号	KR20050002292	申请日期	2005.01.10
申请人		发明人
分类号	H01L27/115;H01L21/8247	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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