| 摘要 |
A method for manufacturing a photomask using a dual spacer is provided to control the line width of a light-shielding pattern and form a fine light-shielding pattern via a simple process. The method for manufacturing a photomask comprises the steps of: forming a first light-shielding layer(110) on a quartz substrate; forming a second light-shielding layer having a certain etching selectivity to the first light-shielding layer on the top of the first light-shielding layer; forming a photoresist pattern on the top of the second light-shielding layer; performing anisotropic etching of the second light-shielding layer exposed by the photoresist pattern; patterning the second light-shielding layer by the photoresist pattern to form a second light-shielding pattern(125); forming buffer metal spacers(130) on both sidewalls of the second light-shielding pattern; etching the first light-shielding layer by using the buffer metal spacers and the second light-shielding pattern as a mask to form a first light-shielding pattern; and removing the second light-shielding pattern, wherein the buffer metal spacer comprises a laminate of the first light-shielding layer and the second light-shielding layer.
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