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发明名称
制造半导体元件的方法
摘要
在此揭示的是制造半导体元件的方法,其包括在形成包含Si的光阻膜之后进行O2电浆处理步骤。
申请公布号
TW200725695
申请公布日期
2007.07.01
申请号
TW095131538
申请日期
2006.08.28
申请人
海力士半导体股份有限公司
发明人
李晟求;郑载昌
分类号
H01L21/027(2006.01)
主分类号
H01L21/027(2006.01)
代理机构
代理人
桂齐恒;阎启泰
主权项
地址
韩国
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