| 摘要 |
THE SURFACE OF A HEAT SINK (22) IS HYDROXYLATED BY IMMERSING THE HEAT SINK (22) IN ALKALI SOLUTION, CLEANING WITH WATER AND DRYING. THEREAFTER, A DILUTED SILANE COUPLING AGENT IS APPLIED TO THE SURFACE OF THE HEAT SINK (22), AND THE HEAT SINK (22) IS DRIED, FORMING A LAYER (A) OF THE SILANE COUPLING AGENT ON THE SURFACE OF THE HEAT SINK (22). THEN, A CHIP (12) CARRIED BY THE DIE PAD (16) AND LEAD FRAMES (18), CONNECTED TO THE CHIP (12) WITH WIRES (20) ARE PLACED IN A MOULDING DIE. THE HEAT SINK (22) IS ALSO PLACED IN THE SAME DIE. THE SYSTEM IS THEN CAST IN A MOULD RESIN TO FORM A SEMICONDUCTOR PACKAGE (10).(FIG. 1) |
