SOI IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

摘要

An SOI image sensor is provided to use signal processing techniques of a conventional image sensor in the surface of an SOI substrate by using a small and high-reliable silicon device in a periphery part while performing a signal process with high speed and high sensitivity by an SOI light receiving pixel of a minimum light receiving unit. A light receiving pixel(210) converts light into an electrical signal, formed on an SOI substrate. A signal process part(200) converts the electrical signal received from the light receiving pixel into a digital signal, adjoining the light receiving pixel and formed in a region of the SOI substrate from which a buried oxide layer(230) is removed. The light receiving pixel can include a reset transistor, an amplification transistor and an address select transistor. The reset transistor resets an image sensor applied from the outside and controlled by a reset signal. The amplification transistor amplifies the photoelectrically converted signal outputted from the light receiving pixel. The address select transistor switches the amplification signal outputted from the amplification transistor.