发明名称 SCHOTTKY DIODE FOR OPTOELECTRONIC APPLICATIONS
摘要 <p>The invention relates to a Schottky diode based on degenerated semiconductors, which is used as optoelectronic device. According to the invention, the diode comprises a degenerated semiconductor (4), a metal (5) for a Schottky contact with the degenerated semiconductor (4) a ring-shaped metal(lic) electrode (10) for the ohmic contact of the semiconductor (4), the broad-band antireflective coating of the semiconductor (4) and namely of the metal. As optoelectronic device, said Schottky diode electro-optically modulates the incidental electromagnetic beam, opto-optically modulates the incidental electromagnetic beam, allows the self modulation of the incidental electromagnetic radiation, converts the wavelength of the incidental electromagnetic beam.</p>
申请公布号 RO121498(B1) 申请公布日期 2007.06.29
申请号 RO20030000163 申请日期 2003.02.28
申请人 MOAG ER POLADIAN GABRIEL 发明人 MOAG ER POLADIAN GABRIEL
分类号 H01L29/872;G02F1/01;G02F1/015;H01L31/101;H01L31/108 主分类号 H01L29/872
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