METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to prevent warpage of a first wafer by attaching a second wafer to the back surface of a first wafer and by growing a silicon epitaxial layer on the front surface of the first wafer. An oxide layer(110) can be formed on the back surface of a first wafer(100). To the back surface of the first wafer doped with impurities of first density, a second wafer doped with impurities of second density lower than the first density is attached. A silicon epitaxial layer(140) is grown on the front surface of the first wafer by using the second wafer as a diffusion preventing layer for preventing the impurities doped into the first wafer from being diffused.