| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a readout method for a threshold of a nonvolatile semiconductor storage device capable of reading the threshold with a high degree of accuracy. <P>SOLUTION: In the readout method for the threshold of the nonvolatile semiconductor storage device, first data is verified while a selection gate is conducted, after a first verification voltage is applied to a word line in a state where the selection gate is blocked, and the first verification readout voltage is verified by converting to a second verification voltage in the state where the selection gate is blocked. When the threshold for the first data is read (ST. 2-ST. 6), the readout voltage for first threshold measurement is applied to the word line, the selection gate is conducted, and the threshold for the first data is read in the state where the selection gate is conducted. When the threshold for the second data is read (ST. 7-ST. 12), the second readout voltage for the threshold measurement is applied to the word line and the threshold for the second data is read in the state where the selection gate is conducted. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
