| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element which can have less substrate contamination caused by an adhesive or the like, can be made low in defective rate caused by substrate cracking or chipping or the like, and can be made high in yield. SOLUTION: The method of manufacturing a semiconductor element comprises a surface treatment step of subjecting a resin film to plasma irradiation or corona discharge to a resin film, a compressing step of stacking a surface-treated surface of the resin film on one surface of a semiconductor formation substrate and compressing the stack, a circuit formation step of forming a semiconductor circuit on the other surface of the semiconductor formation substrate, and a peeling step of peeling off the resin film from the semiconductor formation substrate. COPYRIGHT: (C)2007,JPO&INPIT
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