| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor crystal substrate, by which the warpage of crystal axis generated in a semiconductor crystal substrate, obtained by utilizing a process for vapor depositing a semiconductor crystal on a different kind of substrate, can be reduced. SOLUTION: The method for manufacturing the semiconductor crystal substrate includes: a process for vapor depositing a first semiconductor crystal 4 on a different kind of substrate; a process for separating the first semiconductor crystal 4 from the different kind of substrate; a process for forming a processing-deteriorated layer 7 by grinding the surface of the separated side of the separated first semiconductor crystal 4 and growing a second semiconductor crystal 8 on the processing-deteriorated layer 7; and a process for slicing the stacked body containing the first semiconductor crystal 4 and the second semiconductor crystal 8. At this time, when the thickness of the first semiconductor crystal 4 is defined as h1 and the thickness of the second semiconductor crystal 8 is defined as h2, the ratio of h1 to h2 is preferably 0.01-100, more preferably 0.1-10. COPYRIGHT: (C)2007,JPO&INPIT
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