| 摘要 |
PROBLEM TO BE SOLVED: To reduce defects of a produced epitaxial wafer caused by oxides by reducing the amount of oxides in a raw material solution. SOLUTION: The liquid phase growing apparatus is a liquid phase growing apparatus 10 for growing an epitaxial layer on a substrate 16, wherein a growing tool 11 is equipped with a solution holder 12 and a substrate holder 13, and in the solution holder 12 there are provided solution reservoirs 15A, 15B for accommodating raw material solutions 19A, 19B, and in the substrate holder 13 there is provided a substrate-placing part 17 for placing the substrate 16 so as to enable contact with the raw material solutions 19A, 19B in the solution reservoirs 15A, 15B, and the raw material solutions are brought into contact with the substrate 16 by sliding the solution holder 12 and the substrate holder 13. The surface roughness of an inner wall surface 20 of the solution reservoirs 15A, 15B is set at Ra=1.0-3.0μm. COPYRIGHT: (C)2007,JPO&INPIT
|
