发明名称 Method of measuring film thickness and method of manufacturing semiconductor device
摘要 A method of measuring a film thickness is disclosed. The method includes a step of forming a ferroelectric capacitor on a substrate, a step of forming an insulating film to cover the ferroelectric capacitor, and a step of optically measuring the thickness of the insulating film on an electrode of the ferroelectric capacitor.
申请公布号 US2007148791(A1) 申请公布日期 2007.06.28
申请号 US20060409269 申请日期 2006.04.24
申请人 FUJITSU LIMITED 发明人 IZUMI KAZUTOSHI;TAKEUCHI TETSUYA
分类号 H01L21/66;G01R31/26 主分类号 H01L21/66
代理机构 代理人
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