OXIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

Provided is a ZnO compound semiconductor light emitting element which can emit light from the entire plane at a high efficiency while using a ZnO compound semiconductor from which a higher light emitting efficiency than the light emitting efficiency of a GaN compound can be expected. On an insulating substrate (1), an n-type layer (2), an active layer (3), a p-type layer (4) composed of a ZnO compound semiconductor material are stacked. The specific resistance of the n-type layer is 0.001&·cm or more but not more than 1&·cm, and the film thickness (µm) of the n-type layer is set at a value larger than that calculated by a formula of specific resistance (&·cm)×300. An n-side electrode (5) is formed on an exposed portion on a plane opposite to a plane in contact with an n-type layer, and a p-side electrode (6) is formed on a p-type layer.