CRYSTALLIZATION METHOD AND METHOD OF FABRICATING TFT USING THE SAME

摘要

A method for fabricating a TFT is provided to improve a planarization characteristic by effectively removing a protrusion generated after a crystallization process without deteriorating the reliability of a device. An amorphous silicon layer is deposited on a substrate(80). The amorphous silicon layer is crystallized to form a polysilicon layer. A surface treatment using O2 plasma is performed to remove a protrusion formed in the polysilicon layer. A surface treatment using HF is performed on the polysilicon layer. The surface-treated polysilicon layer is cured by using laser. The cured polysilicon layer is patterned to form a semiconductor layer(84). The surface treatment using HF can be repeated at least twice, including an O3 treatment, a HF treatment and a water cleaning and drying step.