| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium-nitride compound semiconductor light-emitting element that obtains high light extraction efficiency and reduces the drive voltage Vf. <P>SOLUTION: In the gallium-nitride compound semiconductor light-emitting element, a light-transmitting conductive oxide film containing a dopant is laminated on a p-type semiconductor layer in the gallium-nitride compound semiconductor element, the dopant concentration of the interface between the p-type semiconductor layer and the light-transmitting conductive oxide film is set higher than that of the bulk in the light-transmitting conductive oxide film, and the contact resistance between the p-type semiconductor layer and the light-transmitting conductive oxide film is reduced. <P>COPYRIGHT: (C)2007,JPO&INPIT |
