发明名称 POSITIVE PHOTORESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive photoresist composition which ensures good uniformity of coating even in a large area and excels in resist pattern profile. <P>SOLUTION: The positive photoresist composition comprises an alkali-soluble resin, a 1,2-quinonediazido compound and an organic solvent and is obtained by blending a fluorine-containing organosilicon compound represented by formula (1) as a surfactant, wherein Rf is a 5-30C perfluoroalkyl group containing one or more ether bonds in a molecular chain; Q is a polyether group comprising a homopolymerized chain of polyethylene glycol or polypropylene glycol or a copolymerized chain thereof; R is hydrogen atom or a 1-4C alkyl group; X is a divalent linking group other than oxygen atom; Y is a divalent linking group; p is an integer of &ge;3; and n is a positive number of 0<n<3. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007163756(A) 申请公布日期 2007.06.28
申请号 JP20050358960 申请日期 2005.12.13
申请人 SHIN ETSU CHEM CO LTD 发明人 YAMAGUCHI HIROMASA;KATO HIDETO
分类号 G03F7/004;C08G65/48;G03F7/023;G03F7/075;H01L21/027 主分类号 G03F7/004
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