| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a proximity exposure method that prevents chipping in a pattern on a substrate to be exposed for a transfer process even when a small scratch or impurities such as dust deposits on a region of the mask where an exposure pattern is drawn. <P>SOLUTION: The exposure method includes steps of: opening an exposure control shutter (step 2); irradiating the mask with exposure light to a half time zone of an exposure period (first exposure process: steps S4, S6); closing the exposure control shutter (step S8); minutely moving the mask in a horizontal direction (shifting process: step S12); then opening the exposure control shutter (step S14); and irradiating the mask with exposure light in the latter half time zone of the exposure time (second exposure process: steps S16, S18). <P>COPYRIGHT: (C)2007,JPO&INPIT |
