| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method which can inhibit the dishing in a small amount of use of a polishing liquid and can carry out an LSI processing of high performance when chemically and mechanically polishing a workpiece in a semiconductor device manufacturing process. <P>SOLUTION: The method, which chemically and mechanically flattens a conductive material film in a semiconductor device manufacturing method, polishes the film, making a polishing pad contact with a polishing surface of a body to be polished and making a relative motion, while supplying a metal polishing liquid, which has at least one carboxyl group in a molecule, and preferably contains an organic acid not belonged to an amino acid, however, do not contain any polishing particle, and is of 2-6 pH, in a polishing liquid flow of 0.035-0.25 ml/(min cm<SP>2</SP>). <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
