| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor wafer which does not cause a damage on a pattern on the main surface side when working with a backside. SOLUTION: The method of manufacturing a semiconductor wafer comprising a notch on the outer periphery includes a step of forming a pattern on the main surface of a wafer, a step of forming a passivation film over the entire main surface of the wafer where the pattern is formed, a passivation film working step of removing a part of the passivation film, a surface protecting sheet forming step of forming a surface protecting sheet on the main surface of the wafer after the passivation film working step, and a backside polishing step of polishing the backside of the wafer using a chemical after the surface protecting sheet forming step. In the passivation film working step, at least such passivation film is removed as formed within a specified range from the notch. COPYRIGHT: (C)2007,JPO&INPIT
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