| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the semiconductor device, capable of stabilizing the electrical characteristics of a field effect transistor with high reliability, and with improved flexibility of design. <P>SOLUTION: The semiconductor device includes a field effect transistor, provided with a gate electrode that comprises a gate-insulating film 124, and a gate electrode 126 comprising polysilicon particles 125, stacked in the order on a semiconductor substrate 102. The thickness of the gate insulating film 124 is 1.6 nm or smaller, and the average grain size of polysilicon particles 125, located in the vicinity of the gate insulating film 124, is 10 nm or larger and 150 nm or smaller. <P>COPYRIGHT: (C)2007,JPO&INPIT |
