发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of improving extraction efficiency of light, and a method of manufacturing the same. <P>SOLUTION: The semiconductor light emitting element 1 has a support substrate 2 and a semiconductor laminate structure 6 including an MQW active layer 13 emitting the light and an uppermost n-GaN layer 14. A plurality of conic protrusions 14a are formed on the upper surface of the n-GaN layer 14 of the structure 6. Where wavelength of the light emitted from the MQW active layer is &lambda; and a refractive index of the n-GaN layer 14 is n, the protrusion 14a is formed to satisfy W<SB>A</SB>&ge;&lambda;/n in which W<SB>A</SB>refers to an average of width W of the bottom face of the protrusion 14. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007165409(A) 申请公布日期 2007.06.28
申请号 JP20050356800 申请日期 2005.12.09
申请人 ROHM CO LTD 发明人 SAKAI MITSUHIKO
分类号 H01L33/06;H01L21/306;H01L33/22;H01L33/32;H01L33/36 主分类号 H01L33/06
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