摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of improving extraction efficiency of light, and a method of manufacturing the same. <P>SOLUTION: The semiconductor light emitting element 1 has a support substrate 2 and a semiconductor laminate structure 6 including an MQW active layer 13 emitting the light and an uppermost n-GaN layer 14. A plurality of conic protrusions 14a are formed on the upper surface of the n-GaN layer 14 of the structure 6. Where wavelength of the light emitted from the MQW active layer is λ and a refractive index of the n-GaN layer 14 is n, the protrusion 14a is formed to satisfy W<SB>A</SB>≥λ/n in which W<SB>A</SB>refers to an average of width W of the bottom face of the protrusion 14. <P>COPYRIGHT: (C)2007,JPO&INPIT |